masterclass:
surface cleanliness after edm

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This masterclass subject is to comply with GSA surface cleanliness requirements: how to reach ASML grade 1 / grade 2 requirements after wire EDM.

Gate Oxide Integrity (GOI) is crucial, as its degradation can disrupt transistor function. ASML systems require strict measures to prevent GOI-degrading contaminants from reaching the wafer. Grade 2 standards ensure parts and modules are free of Cu, Ag, and Au, essential for preventing cross-contamination. Alternative production methods are necessary to avoid Cu contamination caused by conventional Wire EDM Electrodes. 

Using GSA079910 as a guideline, Ter Hoek uses two strategies to comply and reach ≤1 wt% of combined traces Cu, Ag, and Au on the part surface after Wire EDM: 

1. “Clean” EDM: Use of contaminant-free electrodes
2. Post-treatment after EDM

Mohamed Ali, Technical Sales Manager at Ter Hoek, shares the advantages and disadvantages of both strategies. Including product examples including challenges of the given product.

The video is spoken in English, with English subtitles, and is part of the Ter Hoek Academy. Curious? Fill out the form and get exclusive access to the video →